High capacity memory module with built-in-high-speed bus terminations

There is a memory module for use in conjunction with high speed, impedance-controlled buses. Each memory card may be a conventional printed circuit card with memory chips attached directly to the card. Alternately, high density memory modules assembled from pluggable sub-modules may be used. These sub-modules may be temporarily assembled for testing and/or burn-in. Bus terminations mounted directly on the memory card or the memory module eliminate the need for bus exit connections, allowing the freed up connection capacity to be used to address additional memory capacity on the module. An innovative pin-in-hole contact system is used both to connect sub-modules to the memory module and, optionally, to connect the memory module to a mother board or similar structure. A thermal control structure may be placed in the memory module to cool the increased number of memory chips to prevent excess heat build-up and ensure reliable memory operation.

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What is claimed is:

1. A self-terminating, high frequency memory module, comprising:

a) a substrate;

b) a plurality of electrical contacts disposed along at least one edge of said substrate adapted to connect to an external memory bus;

c) electrical connection means operatively connected to said plurality of electrical contacts forming an extension of said external memory bus;

d) a plurality of memory devices mounted on said substrate selectively connected to said memory bus extension; and

e) bus termination means operatively connected to said memory bus extension.

2. The self-terminating, high-frequency memory module as recited in claim 1, wherein said external memory bus comprises a characteristic impedance and said bus termination exhibits an impedance substantially matching said characteristicimpedance.

3. The self-terminating, high frequency memory module as recited in claim 2, wherein said bus terminating means comprises at least one from the group of resistors, capacitors and inductors disposed on said substrate and electrically connected tolines of said memory bus extension.

4. The self-terminating, high-frequency memory module as recited in claim 1, wherein said external memory bus comprises a socket adapted to receive said plurality of electrical contacts.

5. The self-terminating, high frequency memory module as recited in claim 4, wherein said socket comprises spring contacts adapted to grip said plurality of electrical contacts thereby retaining said substrate in said socket and establishing anelectrical connection between said external memory bus and said electrical contacts.

6. The self-terminating, high frequency memory module as recited in claim 1, wherein said external memory bus comprises at least two external memory buses; said extension of said external memory bus comprises at least two extensions of said atleast two memory buses; and said plurality of memory devices comprise at least two groups of memory devices, each group being independently connected to one of said at least two memory bus extensions.

7. A self-terminating, high frequency memory module, comprising:

a) a substrate;

b) a plurality of electrically-conductive pins along at least one edge of said substrate;

c) electrical connection means operatively connected to said plurality of electrically-conductive pins forming an extension of said external memory bus having a predetermined bus width;

d) a plurality of memory devices mounted on said substrate selectively connected to said memory bus extension; and

e) bus termination means operatively connected to said memory bus extension.

8. The self-terminating, high-frequency memory module as recited in claim 7, wherein said external memory bus comprises a characteristic impedance and said bus termination exhibits an impedance substantially matching said characteristicimpedance.

9. The self-terminating, high frequency memory module as recited in claim 8, wherein said bus terminating means comprises electrical components from the group: resistors, capacitors and inductors disposed on said substrate and electricallyconnected to respective lines comprising said memory bus extension.

10. The self-terminating, high frequency memory module as recited in claim 9, wherein said resistors comprise discrete resistors.

11. The self-terminating memory, high frequency module as recited in claim 9, wherein said resistors comprise a resistor pack.

12. The self-terminating, high frequency memory module as recited in claim 9, wherein said resistors disposed on said substrate comprise a solid-state resistive device.

13. The self-terminating, high frequency memory module as recited in claim 7, wherein said external memory bus comprises a plurality of plated through holes disposed in a printed circuit board structure adapted to receive and detachably retainsaid plurality of pins.

14. A self-terminating, high frequency memory module, comprising:

a) a substrate;

b) a plurality of connectors adapted to receive daughter cards disposed on said substrate;

c) at least one daughter card having electrical connection means adapted to interact with said plurality of connectors and having at least one memory device attached thereto;

d) a plurality of electrical contacts disposed along at least one edge of said substrate adapted to connect to an external memory bus;

e) wiring means on said substrate operatively connected to said plurality of electrical contacts forming an extension of said external memory bus; and

f) bus termination means on said substrate operatively connected to said memory bus extension.

15. The self-terminating, high frequency memory module as recited in claim 14, wherein said plurality of connectors comprise plated through holes disposed in said substrate.

16. The self-terminating, high frequency memory module as recited in claim 15, wherein said plated through holes further comprise an electrically conductive element protruding inwardly at a pin-receiving, distal end thereof.

17. The self-terminating, high frequency memory module as recited in claim 16, wherein said electrical connection means of said daughter card comprises a plurality of electrically conductive pins adapted to interact with said plurality ofconnectors.

18. The self-terminating, high frequency memory module as recited in claim 17, wherein said daughter card comprises a multi-layer printed circuit card.

19. The self-terminating, high frequency memory module as recited in claim 18, wherein said at least one memory device comprises at least one from the group of: bare chip, thin, small-outline packages (TSOP), chip scale packages (CSP) and chipon board (COB).

20. The self-terminating, high frequency memory module as recited in claim 14, wherein said daughter card comprises a plurality of daughter cards substantially parallel to one another.

21. The self-terminating, high frequency memory module as recited in claim 20, wherein said plurality of daughter cards further comprises thermal management structures.

22. The self-terminating, high frequency memory module as recited in claim 21, wherein said thermal management structures comprise at least one heat-conductive fin in thermal contact with said at least one memory device.

23. The self-terminating, high frequency memory module as recited in claim 22, wherein said plurality of daughter cards substantially parallel to one another is mounted substantially perpendicular to said substrate.

24. The self-terminating, high frequency memory module as recited in claim 22, wherein said plurality of daughter cards substantially parallel to one another is mounted at an acute angle relative to a card-receiving surface of said substrate.

25. The self-terminating, high frequency memory module as recited in claim 14, wherein said external memory bus comprises at least two external memory buses; said extension of said external memory bus comprises at least two extensions of saidat least two memory buses; and said at least one daughter card having at least one attached memory device comprises at least two groups of attached memory devices, each group being independently connected to one of said at least two memory busextensions.