Method for preparing carbon doped oxide insulating layers

Abstract:

A method for forming carbon doped oxide layers by chemical vapor deposition using a source gas that includes: (a) an alkyl-alkoxysilane having the formula (R.sup.1).sub.n (R.sup.2 O).sub.4-n Si where R.sup.1 and R.sup.2 are lower alkyl groups and n is an integer between 0 and 3, inclusive, with the proviso that when R.sup.1 and R.sup.2 are methyl groups, n is not equal to 2; (b) a fluorinated alkoxysilane having the formula (R.sup.3 O).sub.n SiF.sub.4-n where R.sup.3 is a lower alkyl group and n is an integer between 1 and 3, inclusive, or a combination thereof.

Citations

4845054 5908672

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Claims:

What is claimed is:

1. A method of forming a carbon doped oxide insulating layer on a substrate comprising subjecting the substrate to a chemical vapor deposition process using a source gascomprising an alkyl-alkoxysilane having the formula (R.sup.1).sub.n (R.sup.2 O).sub.4-n Si where R.sup.1 and R.sup.2 are lower alkyl groups and n is an integer between 0 and 3, inclusive, with the proviso that when R.sup.1 and R.sup.2 are methyl groups,n is not equal to 2, to form a carbon doped oxide insulating layer on the substrate.

2. The method of claim 1 wherein the chemical vapor deposition process is plasma enhanced chemical vapor deposition.

3. The method of claim 1 wherein R.sup.1 and R.sup.2, independently, have between 1 and 4 carbon atoms, inclusive.

4. The method of claim 1 wherein the source gas comprises methyltrimethoxysilane.

5. The method of claim 1 wherein the source gas comprises tetramethoxysilane.

6. The method of claim 1 wherein the source gas comprises trimethylmethoxysilane.

7. The method of claim 1 wherein the source gas further comprises a gas selected from the group consisting of hydrocarbons, alkylsilanes, dimethyldimethoxysilane, and combinations thereof.

8. The method of claim 1 wherein the carbon doped oxide layer has a k value no greater than 2.5.

9. The method of claim 1 wherein the carbon doped oxide layer has a thickness ranging from 300 nanometers to 3,000 nanometers.

10. A method of forming a carbon doped oxide insulating layer on a substrate comprising subjecting the substrate to a chemical vapor deposition process using a source gas comprising a fluorinated alkoxysilane having the formula (R.sup.3 O).sub.nSiF.sub.4-n where R.sup.3 is a lower alkyl group and n is an integer between 1 and 3, inclusive, to form a carbon doped oxide insulating layer on the substrate.

11. The method of claim 10 wherein the chemical vapor deposition process is plasma enhanced chemical vapor deposition.

12. The method of claim 10 wherein R.sup.3 has between 1 and 4 carbon atoms, inclusive.

13. The method of claim 10 wherein the source gas comprises fluorinated methoxysilane.

14. The method of claim 10 wherein the source gas comprises fluorinated ethoxysilane.

15. The method of claim 10 wherein the source gas further comprises a gas selected from the group consisting of hydrocarbons, alkylsilanes, dimethyldimethoxysilane, and combinations thereof.

16. The method of claim 10 wherein the carbon doped oxide layer has a k value no greater than 2.5.

17. The method of claim 10 wherein the carbon doped oxide layer has a thickness ranging from 300 nanometers to 3,000 nanometers.

18. A method of forming a carbon doped oxide insulating layer on a substrate comprising subjecting the substrate to a plasma enhanced chemical vapor deposition process using a source gas comprising a gas selected from the group consisting of:

(a) an alkyl-alkoxysilane having the formula (R.sup.1).sub.n (R.sup.2 O).sub.4-n Si where R.sup.1 and R.sup.2 are lower alkyl groups and n is an integer between 0 and 3, inclusive, with the proviso that when R.sup.1 and R.sup.2 are methyl groups,n is not equal to 2;

(b) a fluorinated alkoxysilane having the formula (R.sup.3 O).sub.n SiF.sub.4-n where R.sup.3 is a lower alkyl group and n is an integer between 1 and 3, inclusive; and combinations thereof,

to produce a carbon doped oxide layer having a k value no greater than 2.5.

Patent number:
6316063
View patent at USPTO

Filing date:
December 15, 1999

Issue date:
November 13, 2001

Inventors:
Ebrahim Andideh (Portland, OR)
Larry Wong (Beaverton, OR)

Assignee:
Intel Corporation (Santa Clara, CA)

Primary Examiner:
Bernard Pianalto

Attorney, Agent or Firm:
Fish & Richardson P.C.

Current U.S. Classification: 427/249.1 427/249.15 427/255.28 427/255.37 427/255.39 427/577 427/578 427/58 427/585