Polymers, resist compositions and patterning process
An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.
| Patent number | Title | Issue date |
| 6627383 | Photoresist monomer comprising bisphenol derivatives and polymers thereof | 2003-09-30 |
| 6686123 | Photoresist monomer, polymer thereof and photoresist composition containing the same | 2004-02-03 |
| 6727033 | Positive resist composition | 2004-04-27 |
| 6794277 | Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device | 2004-09-21 |
| 6800414 | Radiation-sensitive resin composition | 2004-10-05 |
| 6806026 | Photoresist composition | 2004-10-19 |
| 6858370 | Positive photosensitive composition | 2005-02-22 |
| 6864037 | Polymers, resist compositions and patterning process | 2005-03-08 |
| 6964840 | Radiation-sensitive resin composition | 2005-11-15 |
| 7014980 | Photoresist composition | 2006-03-21 |
| 7135595 | Photoresist composition | 2006-11-14 |
| 7214733 | Positive type resist composition | 2007-05-08 |
| 7217496 | Fluorinated photoresist materials with improved etch resistant properties | 2007-05-15 |
If you were to search for Polymers, resist compositions and patterning process using relaxed search criteria, these patents would come up:
What is claimed is:
1. A polymer comprising recurring units of at least one of the following general formulae (1a), (1b) and (1c): ##STR27##
wherein R is selected from the group consisting of hydrogen, an acid labile group, straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms, acyl group, and acyl group having a fluorinated alkyl moiety, R.sup.1 andR.sup.2 each are a hydrogen or fluorine atom, R.sup.3 is an acid labile group, R.sup.4 is an adhesive group, and R.sup.5 is a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms.
2. A resist composition comprising the polymer of claim 1.
3. A chemically amplified, positive resist composition comprising (A) the polymer of claim 1, (B) an organic solvent, and (C) a photoacid generator.
4. The resist composition of claim 3 further comprising (D) a basic compound.
5. The resist composition of claim 3 further comprising (E) a dissolution inhibitor.
6. A process for forming a resist pattern comprising the steps of: applying the resist composition of claim 2 onto a substrate to form a coating, heat treating the coating and then exposing it to high-energy radiation in a wavelength band of 110to 180 nm or 1 to 30 nm through a photo mask, and optionally heat treating the exposed coating and developing it with a developer.
7. The pattern forming process of claim 6 wherein the high-energy radiation is an F.sub.2 excimer laser beam, Ar.sub.2 excimer laser beam or soft x-ray.
Patent number:
6511787
View patent at USPTO
Filing date:
September 7, 2001
Issue date:
January 28, 2003
Inventors:
Kentaro Tsutsumi (Kawagoe, JP)
Jun Hatakeyama (Nakakubiki-gun, JP)
Yuji Harada (Nakakubiki-gun, JP)
Jun Watanabe (Nakakubiki-gun, JP)
Masayuki Endo (Izumi, JP)
Shinji Kishimura (Itami, JP)
Masaru Sasago (Hirakata, JP)
Yoshio Kawai (Nakakubiki-gun, JP)
Kazuhiko Maeda (Chiyoda, JP)
Satoru Miyazawa (Kawagoe, JP)
Michitaka Ootani (Kawagoe, JP)
Assignee:
Central Glass Co., Ltd. (Yamaguchi-ken, JP)
Primary Examiner:
Rosemary Ashton
Attorney, Agent or Firm:
Millen, White, Zelano & Branigan, P.C.
Current U.S. Classification: 430/270.1 430/326 430/907 430/910 526/242 526/319
