Polymers, resist compositions and patterning process

Abstract:

An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

Citations
4822721 5142009 6379874 6433118
Cited By
Patent number     Title Issue date
6627383 Photoresist monomer comprising bisphenol derivatives and polymers thereof 2003-09-30
6686123 Photoresist monomer, polymer thereof and photoresist composition containing the same 2004-02-03
6727033 Positive resist composition 2004-04-27
6794277 Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device 2004-09-21
6800414 Radiation-sensitive resin composition 2004-10-05
6806026 Photoresist composition 2004-10-19
6858370 Positive photosensitive composition 2005-02-22
6864037 Polymers, resist compositions and patterning process 2005-03-08
6964840 Radiation-sensitive resin composition 2005-11-15
7014980 Photoresist composition 2006-03-21
7135595 Photoresist composition 2006-11-14
7214733 Positive type resist composition 2007-05-08
7217496 Fluorinated photoresist materials with improved etch resistant properties 2007-05-15
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Claims:

What is claimed is:

1. A polymer comprising recurring units of at least one of the following general formulae (1a), (1b) and (1c): ##STR27##

wherein R is selected from the group consisting of hydrogen, an acid labile group, straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms, acyl group, and acyl group having a fluorinated alkyl moiety, R.sup.1 andR.sup.2 each are a hydrogen or fluorine atom, R.sup.3 is an acid labile group, R.sup.4 is an adhesive group, and R.sup.5 is a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms.

2. A resist composition comprising the polymer of claim 1.

3. A chemically amplified, positive resist composition comprising (A) the polymer of claim 1, (B) an organic solvent, and (C) a photoacid generator.

4. The resist composition of claim 3 further comprising (D) a basic compound.

5. The resist composition of claim 3 further comprising (E) a dissolution inhibitor.

6. A process for forming a resist pattern comprising the steps of: applying the resist composition of claim 2 onto a substrate to form a coating, heat treating the coating and then exposing it to high-energy radiation in a wavelength band of 110to 180 nm or 1 to 30 nm through a photo mask, and optionally heat treating the exposed coating and developing it with a developer.

7. The pattern forming process of claim 6 wherein the high-energy radiation is an F.sub.2 excimer laser beam, Ar.sub.2 excimer laser beam or soft x-ray.

Patent number:
    6511787
View patent at USPTO

Filing date:
    September 7, 2001

Issue date:
    January 28, 2003

Inventors:
Kentaro Tsutsumi (Kawagoe, JP)
Jun Hatakeyama (Nakakubiki-gun, JP)
Yuji Harada (Nakakubiki-gun, JP)
Jun Watanabe (Nakakubiki-gun, JP)
Masayuki Endo (Izumi, JP)
Shinji Kishimura (Itami, JP)
Masaru Sasago (Hirakata, JP)
Yoshio Kawai (Nakakubiki-gun, JP)
Kazuhiko Maeda (Chiyoda, JP)
Satoru Miyazawa (Kawagoe, JP)
Michitaka Ootani (Kawagoe, JP)

Assignee:
Central Glass Co., Ltd. (Yamaguchi-ken, JP)

Primary Examiner:
Rosemary Ashton

Attorney, Agent or Firm:
Millen, White, Zelano & Branigan, P.C.

Current U.S. Classification: 430/270.1 430/326 430/907 430/910 526/242 526/319

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example: magnesium alloy,  or: 6652852,  or: Jeffrey A. Ledbetter (inventor),  or whatever