Process for preparation of diffusion barrier for semiconductor

A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiN.sub.x on said substrate using an organotitanium compound under a flow of H.sub.2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiN.sub.x thin film having a low carbon content and low specific resistivity.

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What is claimed is:

1. A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of athin film of TiN.sub.x on said substrate using an organotitanium compound under a flow of H.sub.2 plasma, wherein x ranges from 0.1 to 1.5.

2. The process of claim 1, wherein the thin film of TiN has a carbon content of less than 30 atom % based on the sum of titanium, nitrogen and carbon constituents of the film.

3. The process of claim 1, wherein the organotitanium compound is tetrakis-dimethylamidotitanium or tetrakis-diethylamidotitanium.

4. The process of claim 1, wherein the semiconductor substrate is a silicone wafer.